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  Datasheet File OCR Text:
 SHINDENGEN
Darlington Transistor
2SB1283
(TP7J10)
- 7 A PNP
OUTLINE DIMENSIONS
Case : ITO-220 Unit : mm
RATINGS
*oeAbsolute Maximum Ratings Item Symbol Conditions Ratings nit U Storage TemperatureTstg -55*+150 *Z Junction TemperatureTj +150 *Z Collector to Base Voltage V -100 V CBO Collector to Emitter Voltage V -100 V CEO Emitter to Base Voltage V -7 V EBO Collector Current DCI -7 A C Collector Current Peak I -10 A CP Base Current DC I -0.5 A B Base Current Peak I -1 A BP Total Transistor Dissipation = 25*Z P Tc 30 W T Dielectric Strength Vdis Terminals to case AC21 minute kV Mounting Torque TOR (Recommended torque : 0.3Nm*j 0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item Symbol Conditions Ratings nit U Collector Cutoff Current V = -100V I Max -0.1 A m CBO CB I Max -0.1 CE CEO V = -100V Emitter Cutoff Current I V = -7V Max -5mA EBO EB DC Current Gain h = Min 1,500 CE C -3A FE V = -3V, I Max 15,000 Collector to Emitter V (sat)I = -3A Saturation Voltage Max -1.5 V CE C Base to Emitter Saturation Voltage V (sat)I = -5mA Max -2.0 V B Thermal Resistance BE Junction to case Max 4.16 AEjc *Z/W Transition Frequency fT V = 10V, 0.7A = TYP 20 Hz M CE C I Turn on Time ton Max 1 I = -3A C Storage Time = ts I =B2 -5mA Max 4 Es B1 I R= 10 L Fall Time tf V = -4V Max 2 BB2
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SB1283
Saturation Voltage
-3 -2A -3A -5A -7A -10A -2.5 -10A -7A -3A -5A -1.5 -2
-3
IC = -1A
-2.5
-2
-1.5
-2A
IC = -1A
Collector-Emitter Voltage VCE [V]
-0.5
-0.5
Tc = 25C 0 -0.001 -0.01 -0.1 -1
0 -0.0001
Base Current IB [A]
Base-Emitter Voltage VBE [V]
-1
-1
2SB1283
Switching Time - IC
ts
Switching Time tSW [s]
1 tf
ton
IB1 = IC/600 IB2 = IC/600 VBB2 = -4V VCC = -30V Tc = 25C 0.1 0 -1 -2 -3 -4 -5 -6 -7
Collector Current IC [A]
2SB1283
10
Switching Time - Tc
ts
Switching Time tSW [s]
tf 1
ton
IC = -3A IB1 = -5mA IB2 = -5mA VBB2 = -4V R L = 10 0.1 0 50 100 150
Case Temperature Tc [C]
2SB1283
Transient Thermal Impedance
10
1
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-5 10-3
10-4
10-2
10-1
100
101
102
Time t [s]
2SB1283
-10 DC 10ms
Forward Bias SOA
1ms 150s
PT limit
-1
Collector Current IC [A]
IS/B limit
-0.1
Tc = 25C Single Pulse -0.01 -1 -10 -100
Collector-Emitter Voltage VCE [V]
2SB1283
100
Collector Current Derating
Collector Current Derating [%]
80
60 IS/B limit 40 PT limit 20
VCE = fixed 0 0 50 100 150
Case Temperature Tc [C]
2SB1283
-15
Reverse Bias SOA
-10
Collector Current IC [A]
-5
IB1 = 0.005IC IB2 = -70mA VBB2 = -5V Tc < 150C 0 0 -20 -40 -60 -80 -100 -120 -140
Collector-Emitter Voltage VCE [V]
2SB1283
35 Infinite heatsink
Derating Curve
Allowable Transistor Dissipation PT [W]
30
25
20 200mm x 200mm x 2mm Al 100 x 100 x 2 10 50 x 50 x 2 5 No heatsink
15
0
0
50
100
150
Ambient Temperature Ta [C]


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